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MURS160AFG Datasheet(PDF) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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MURS160AFG Datasheet(HTML) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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1 / 3 page  SMAF 1. Cathode 2. Anode 2 1 2 Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. High current capability. High surge current capability. Glass passivated chip junction. • Superfast recovery time for switching mode application. Lead-free parts meet RoHS requirments. • • • • • • PARAMETER CONDITIONS Forward rectified current Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature Ambient temperature = 50 C O 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT I O I FSM I R R θJA C J T STG A A μA OC/W OC pF 1.0 30 5.0 +150 -55 110 V = V T = 25 C R RRM J O V = V T = 100 C R RRM J O Junction to ambient 15 100 MURS105AFG MURS110AFG MURS115AFG 50 100 150 35 70 105 SYMBOLS V RRM (V) V RMS V R (V) (V) *1 *2 *3 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@I =1.0A *5 Reverse recovery time F , note 1 V F (V) *4 MURS120AFG MURS130AFG 200 300 140 210 1.70 -55 to +150 MURS140AFG MURS150AFG 400 500 280 350 T RR (nS) *5 35 50 100 150 200 300 400 500 1.00 1.25 MURS160AFG 600 600 420 (C) O Operating temperature T, J Note 1. Reverse recovery time test condition, I =0.5A, I =1.0A, I =0.25A FRRR MURS105AFG THRU MURS160AFG Chip Silicon Rectifier 1.0A Surface Mount Super Fast Rectifiers - 50-600V Features Maximum ratings (AT T =25 A oC unless otherwise noted) @ 2018 Copyright By American First Semiconductor REV:1.0 Page 1/3 |
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