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2

SM2001CSK

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.4 - March, 2018

®

Symbol

Parameter

Channel 1

Channel 2

Unit

Drain-Source Voltage

20

-20

Gate-Source Voltage

±12

±12

V

Maximum Junction Temperature

150

Storage Temperature Range

-55 to 150

°C

Diode Continuous Forward Current

1.8

-1.2

Continuous Drain Current

9.5

-6

a

Pulsed Drain Current

30

-20

A

2

2

Power Dissipation

1.3

1.3

W

t

£ 10s

45

45

Thermal Resistance-Junction to Ambient

Steady State

62.5

62.5

Thermal Resistance-Junction to Lead

Steady State

20

20

°C/W

b

Avalanche Current, Single pulse (L=0.1mH)

16

-15

A

b

Avalanche Energy, Single pulse (L=0.1mH)

12

11

mJ

Note a：Pulse width limited by max. junction temperature.

Note b：UIS tested and pulse width limited by maximum junction temperature 150