2N7002L datasheet(2/4 Pages) ARTSCHIP

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2N7002L

Small signal MOSFET

60V, 115mA, N-Channel SOT-23

www.artschip.com

ELECTRICAL CHARACTERISTICS

(TA=25℃ unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

(VGS=0, ID=10µAdc)

V(BR)DSS

Vdc

Zero Gate Voltage Drain Current

TJ=25℃

(VGS=0, VDS=60Vdc)

TJ=125℃

IDSS

1.0

500

µAdc

Gate-Body Leakage Current, Forward

(VGS=20Vdc)

IGSSF

100

nAdc

Gate-Body Leakage Current, Forward

(VGS=-20Vdc)

IGSSR

-100

nAdc

ON CHARACTERISTICS

(Note 5)

Gate Threshold Voltage

(VDS=VGS,ID=250µAdc)

VGS(th)

1.0

2.5

Vdc

On-State Drain Current

(VDS≥2.0VDS(on), VGS=10Vdc)

ID(on)

500

Static Drain-Source On-State Voltage

(VDS=VGS,ID=500µAdc)

(VGS=VGS,ID=50µAdc)

VDS(on)

3.75

0.375

Vdc

Static Drain-Source On-State Resistance

(VGS=10V, ID=500mAdc)

Tc=25℃

Tc=125℃

(VGS=5.0Vdc,ID=50mAdc)

Tc=25℃

Tc=125℃

rDS(on)

7.5

13.5

7.5

13.5

Ohms

Forward Transconductance

(VDS≥2.0 VDS(on),ID=200mAdc)

gFS

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS=25Vdc,VGS=0,f =1.0MHz)

Ciss

Output Capacitance

(VDS=25Vdc, VGS=0,f=1.0MHz)

Coss

Reverse Transfer Capacitance

(VDS=25Vdc, VGS=0,f=1.0MHz)

Crss

5.0

SWITCHING CHARACTERISTICS

(Note 5)

Turn-On Delay Time

td(on)

Turn-Off Delay Time

(VDD=25Vdc,ID≈500mAdc,RG=25Ω,

RL=50Ω,Vgen=10V)

td(off)

BODY-DRAIN DIODE RATINGS

Diode Forward On-Voltage

(IS=11.5mAdc, VGS=0V)

VSD

-1.5

Vdc

Source Current Continuous

(Body Diode)

-115

mAdc

Source Current Pulsed

ISM

-800

mAdc

5.Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%.

2N7002L Datasheet(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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