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APM4953 Datasheet(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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APM4953 Datasheet(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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2 / 7 page ![]() APM4953 Dual P-Channel Enhancement Mode Mosfet www.artschip.com 2 Electrical Characteristics (TA=25℃ unless otherwise noted) APM4953 Symbol Parameter Test Condition Min. Typa. Max Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -30 V IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V -1 µA VGS(th) Gate Threshold Voltage VGS=VGS, IDS=-250µA -1 -1.5 -2 V IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA VGS=-10V, IDS=-4.9A 53 60 RDS(ON) Drain-Source On-state Resistance b VGS=-4.5V, IDS=-3.6A 80 95 mΩ VSD Diode Forward Voltage b ISD=-1.7A, VGS=0V -0.7 -1.3 V Dynamic a Qg Total Gate Charge 22.3 29 Qgs Gate-Source Charge 4.65 Qgd Gate-Drain Charge VDS=-15V, IGS=-10V ID=-4.6A 2 nC td(on) Turn-on Delay Time 10 18 Tr Turn-on Rise Time 15 20 td(OFF) Turn-off Delay Time 22 38 Tf Turn-off Fall Time VDD=-15V, ID=-2A, VGEN=-10V, RG=6Ω RL=7.5Ω 15 25 ns Ciss Input Capacitance 1260 Coss Output Capacitance 340 Crss Reverse Transfer Capacitance VGS=0V VDS=-25V Frequency=1.0MHz 220 pF Notes a: Pulse test; pulse width ≤300µs, duty cycle ≤2% b: Guaranteed by design, not subject to production testing |
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