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ART20U120 Datasheet(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

Part # ART20U120
Description  INSULATED GATE BIPOLAR TRANSISTOR
PDF  6 Pages
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Manufacturer  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
Direct Link  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

ART20U120 Datasheet(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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ART20U120
INSULATED GATE BIPOLAR TRANSISTOR
www.artschip.com
2
ELECTRICAL CHARACTERISTICS (Tj =25 °C)
Parameter
Symbol
Units
Test Conditions
Min
Typ.
Max
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V
VGE = 0V, IC = 250µA
1200
-
-
Emitter-to-Collector Breakdown
Voltage
V(BR)ECS
V
VGE = 0V, IC = 1A
18
-
-
Breakdown Voltage Temp.Coefficient
∆V(BR)CES/∆TJ
V/˚CVGE = 0V, IC = 2 mA
-
0,2
-
VGE = 15V, IC = 10A
-
3,0
4,0
VGE = 15V, IC = 20A
-
3,8
-
Collector-to-Emitter Saturation
Voltage
(See figure 2,5)
VCE(ON)
V
VGE = 15V, IC = 10A
TJ =150˚C
-
2,9
-
Gate Threshold Voltage
VGE(th)
V
VGE=VCE, IC =250 µA
3,0
-
6,0
Threshold Voltage Temp.Coefficient
∆V(GE)th/ ∆TJ
mV/˚CVGE=VCE, IC =250µA
-
-11
-
Forward Transconductance
g (fe)
S
VCE = 100V, IC = 10A
4,3
6,8
-
VCE = 1200V, VGE =0V
-
-
250
VCE = 10V, VGE =0V
TJ=25˚C
-
-
2,0
Zero Gate Voltage Collector
Current
ICES
µA
VCE = 1200V, VGE =0V
TJ =150˚C
-
-
2000
Gate-to-Emitter Leakage Current
IGES
nA
VGS = ±20V
±100
SWITCHING CHARACTERISTICS (Tj =25 °C)
Parameter
Symbol
Units
Test Conditions
Min
Typ.
Max
Total Gate Charge (turn on)
Qg
-
54
80
Gate-to-Emitter Charge (turn on)
Qge
-
12
14
Gate-to-Collector Charge (turn on)
Qgc
nC
VGE = 15V,VCC = 400V,
IC =10A
See Figure 8
-
24
32
Turn-On Delay Time
td(on)
-
30
-
Rise Time
tr
-
27
-
Turn-Off Delay Time
td(off)
-
230
300
Fall Time
tf
ns
-
130
170
Turn-On Switching Loss
Eon
-
0,66
-
Turn-Off Switching Loss
Eoff
-
0,94
-
Total Switching Loss
EtS
mJ
VCC =960V, IC =10A
VGE = 15V RG=23Ω
Energy losses include «tail»
See Figure 9,10,14
-
1,6
2,4
Turn-On Delay Time
td(on)
-
29
-
Rise Time
tr
-
28
-
Turn-Off Delay Time
td(off)
-
340
-
Fall Time
tf
ns
-
350
-
Total Switching Loss
EtS
mJ
TJ =150˚C
VCC =960V, IC =10A
VGE = 15V RG=23 Ω
Energy losses include «tail»
See Figure 10,11,14
-
3,3
-
Input Capacitance
CISS
-
830
-
Output Capacitance
COSS
-
630
-
Reverse Transfer Capacitance
CRSS
pF
VGE = 0V,VCC = 30V,
f = 1.0MHz
See Figure 7
-
16
-
NOTES:
1 Repetitive rating; V
GE =20V, pulse width limited by max junction temperature.(Fig.13b)
2 V
CC=80%(VCES), L= 10 µH, VGE = 20V, RG=23 Ω,(Fig.13a)
3 Pulse width ≤80 µs, duty factor ≤0,1%.
4 Pulse width 5,0µs single short.



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