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ART30U120 Datasheet(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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ART30U120 Datasheet(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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2 / 7 page ![]() ART30U120 INSULATED GATE BIPOLAR TRANSISTOR www.artschip.com 2 ELECTRICAL CHARACTERISTICS (Tj =25 °C) Parameter Symbol Units Test Conditions Min Typ. Max Collector-to-Emitter Breakdown Voltage V(BR)CES V VGE = 0V, IC = 250µA 1200 - - Breakdown Voltage Temp.Coefficient ∆V(BR)CES/ ∆TJ V/˚C VGE = 0V, IC = 1 mA - 0,4 - VGE = 15V, IC = 15A - 2,7 3,3 VGE = 15V, IC = 30A - 3,2 - Collector-to-Emitter Saturation Voltage VCE(ON) V VGE = 15V, IC = 15A TJ =150˚C - 2,6 - Gate Threshold Voltage VGE(th) V VGE=VCE, IC =250 µA 3,0 - 6,0 Threshold Voltage Temp.Coefficient ∆V(GE)th/ ∆TJ mV/˚C VGE=VCE, IC =2mA - -3,5 - Forward Transconductance g (fe) S VCE = 100V, IC = 15 A 8,0 14 - VCE = 1200V, VGE =0V - - 250 VCE = 10V, VGE =0V - - 2,0 Zero Gate Voltage Collector Current ICES µA VCE = 1200V, VGE =0V TJ =150˚C - - 3000 Gate-to-Emitter Leakage Current IGES nA VGS = ±20V ±100 SWITCHING CHARACTERISTICS (Tj =25 °C) Parameter Symbol Units Test Conditions Min Typ. Max Total Gate Charge (turn on) Qg - 98 140 Gate-to-Emitter Charge (turn on) Qge - 18 22 Gate-to-Collector Charge (turn on) Qgc nC VGE = 15V,VCC = 400V, IC =15A - 45 55 Turn-On Delay Time td(on) - 31 - Rise Time tr - 23 - Turn-Off Delay Time td(off) - 230 300 Fall Time tf ns - 180 238 Turn-On Switching Loss Eon - 1,0 - Turn-Off Switching Loss Eoff - 1,8 - Total Switching Loss EtS mJ VCC =960V, IC =15A VGE = 15V RG=24 Ω Energy losses include «tail» - 2,5 2,9 Short Circuit Withstand Time tsc µs Vcc=720V, TJ=125˚C VGE=15V RG=5,0Ω 10 - - Turn-On Delay Time td(on) - 32 - Rise Time tr - 27 - Turn-Off Delay Time td(off) - 970 - Fall Time tf ns - 360 - Total Switching Loss EtS mJ TJ=150˚C VCC =960V, IC =15A VGE = 15V RG=24 Ω Energy losses include «tail» - 5,0 - Input Capacitance CISS - 1800 - Output Capacitance COSS - 80 - Reverse Transfer Capacitance CRSS pF VGE = 0V,VCC = 30V, f = 1.0MHz - 40 - Notes: 1 Repetitive rating; V GE =20V, pulse width limited by max junction temperature. 2 V CC=80%(VCES), L= 10 µH, VGE = 20V, RG=10 Ω. 3 Pulse width ≤80 µs, duty factor ≤0,1%. 4 Pulse width 5,0µs single short. |
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