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2SA2080 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SA2080
Description  SILICON PNP EPITAXIAL
PDF  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SA2080 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SA2080
Rev.0, Feb. 2002, page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–30
V
Collector to emitter voltage
V
CEO
–30
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Emitter current
I
E
100
mA
Collector power dissipation
P
C*
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +125
°C
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–30
V
I
C = –10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–30
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
V
I
E = –10 µA, IC = 0
Collector cutoff current
I
CBO
–0.5
µA
V
CB = –20 V, IE = 0
Emitter cutoff current
I
EBO
–0.5
µA
V
EB = –2 V, IC = 0
DC current transfer ratio
h
FE*
1
100
500
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
–0.2
V
I
C = –10 mA, IB = –1 mA
Base to emitter voltage
V
BE
–0.75
V
V
CE = –12 V, IC = –2 mA
Notes: 1. The 2SA2080 is grouped by h
FE as follows.
Grade
B
C
D
Mark
MB
MC
MD
h
FE
100 to 200
160 to 320
250 to 500



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