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2SC5999 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SC5999
Description  NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5999 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SC5999
No.8029-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Output Capacitance
Cob
VCB=10V, f=1MHz
170
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=10A, IB=500mA
150
300
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=10A, IB=500mA
0.93
1.4
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=100µA, IE=0
120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100µA, RBE=0
120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=100µA, IC=0
6
V
Turn-ON Time
ton
See specified Test Circuit.
230
ns
Storage Time
tstg
See specified Test Circuit.
1300
ns
Fall Time
tf
See specified Test Circuit.
40
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
2069C
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
10.2
1.2
2.55
2.55
2.55
2.55
4.5
0 to 0.3
0.4
1.3
0.8
12
3
VR
RB
VCC=20V
IC=20IB1= --20IB2=4A
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
IT07555
0
16
14
12
10
8
6
4
2
02
4
6
10
8
IT07556
0
25
20
15
10
5
01
2
3
5
4
IB=0
IB=0
50mA
5mA
10mA
15mA
150mA
100mA
250mA 200mA
25mA
20mA
30mA
35mA
40mA
45mA
50mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V



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