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BC307 Datasheet(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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BC307 Datasheet(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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1 / 3 page  BC307/308/309 PNP Epitaxial Silicon Transistor www.artschip.com 1 Switching and Amplifier Applications .Low Noise: BC309 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 ℃ unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage :BC307 :BC308/309 -50 -30 V V VCEO Collector-Emitter Voltage :BC307 :BC308/309 -45 -25 V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ TSTG Storage Temperature -55~150 ℃ Electrical Characteristics Ta=25 ℃ unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage :BC307 :BC308/309 Ic=-2mA, IB=0 -45 -25 V V BVCES Collector-Emitter Breakdown Voltage :BC307 :BC308/309 Ic=-10µA, VBE=0 -50 -30 V V BVEBO Emitter-Base Breakdown Voltage IE=-10µA, IC=0 -5 V ICES Collector Cut-off Current :BC307 :BC308/309 VCE=-45V, VBE=0 VCE=-25V,VBE=0 -2 -2 -15 -15 nA nA hFE DC Current Gain VCE=-5V, IC=-2mA 120 800 VCE(sat) Collector-Emitter Saturation Voltage Ic=-10mA, IB=-0.5mA Ic=-100mA, IB=-5mA -0.5 -0.3 V V VBE(sat) Collector-Base Saturation Voltage Ic=-10mA, IB=-0.5mA Ic=-100mA, IB=-5mA -0.7 -0.85 V V VBE(on) Base-Emitter On Voltage VCE=-5V, IC=-2mA -0.55 -0.62 -0.7 V fT Current Gain Bandwidth Product VCE=-5V, Ic=-10mA, f=50MHz 130 MHz Cob Output Capacitance VCB=-10V, IE=0, f=1MHz 6 pF Cib Input Capacitance VEB=-0.5V, IC=0, f=1MHz 12 pF NF Noise Figure :BC307/308 :BC309 :BC309 VCE=-5V, IC=-0.2mA, RG=2k Ω, f=1KHz VCE=-5V, Ic=-0.2mA RG=2K Ω, f=30~15kHz 2 10 4 4 dB dB dB |
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