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BUZ80AFI Datasheet(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

Part # BUZ80AFI
Description  N-Channel Enhancement Mode Power MOS Transistor
PDF  4 Pages
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Manufacturer  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
Direct Link  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

BUZ80AFI Datasheet(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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BUZ80A/BUZ80AFI
N-Channel Enhancement Mode
Power MOS Transistor
www.artschip.com
2
THERMAL DATA
To-220
ISOWATT220
Rthj-case
Thermal Resistance Junctions-case
MAX
1.25
3.12
℃/W
Rthj-amb
Rthc-sink
TI
Thermal Resistance Junctions-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
℃/W
℃/W
℃
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax,
δ <1%)
3.8
A
EAS
Single Pulse Avalanche Energy
(starting Tj=25
℃,I
D=IAR, VDD=50V)
200
mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tjmax,
δ <1%)
8
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(Tc=100
℃, pulse width limited by T
jmax,
δ <1%)
2.2
A
ELECTRICAL CHARACTERISTICS (Tcase=25
℃ unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID=250µA
VGS=0
800
V
IDSS
Zero Gate Voltage
Drain Current (VGS=0)
VDS=Max Rating
VDS=Max Rating x 0.8 Tc=125
℃
250
1000
µA
µA
IGSS
Gate-body leakage
Current (VDS=0)
VGS=±20V
±100
nA
ON(*)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS=VGS
ID=1mA
2
3
4
V
RDS(on)
Static Drain-source On
Resistance
VGS=10V
ID=1.7A
VGS=10V
ID=1.7A Tc=100
℃
2.5
3
6
Ω
Ω
ID(on)
On State Drain Current
VGS>ID(on) x RDS(on)max
VGS=10V
3.8
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs(*)
Forward
Transconductance
VDS> ID(on) x RDS(on)max
ID=1.7A
1
s
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS=25V
f=1MHz
VGS=0
1100
150
55
pF
pF
pF



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