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2SA1012 Datasheet(PDF) 1 Page - SHENZHEN KOO CHIN ELECTRONICS CO., LTD. |
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2SA1012 Datasheet(HTML) 1 Page - SHENZHEN KOO CHIN ELECTRONICS CO., LTD. |
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1 / 3 page  1 2 3 2SA1012 TRANSISTOR (PNP) FEATURES HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-1mA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -1 μA DC current gain hFE(1) VCE=-1V, IC=-1A 70 240 hFE(2) * VCE=-1V, IC=-3A 30 Collector-emitter saturation voltage VCE(sat) * IC=-3A, IB=150mA -0.2 -0.4 V Base-emitter saturation voltage VBE(SAT) IC=-3A, IB=150mA -0.9 -1.2 V Transition frequency fT VCE=-4V, IC=-1A 60 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 170 pF Turn-on Time ton 0.1 Storage Time tstg 1.0 Switching time Fall Time tf VCC=-30V,IC=-3A, IB1=-IB2=-0.15A 0.1 us *Pulse test: tp≤300μS, δ≤0.02. CLASSIFICATION OF hFE Rank O Y Range 70-140 120-240 TO-220 1. BASE 2. COLLECTOTR 3. EMITTER |
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