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WNMD2176 Datasheet(PDF) 4 Page - Will Semiconductor Ltd.

Part # WNMD2176
Description  Dual N-Channel, 20V, 2.6A, Power MOSFET
PDF  6 Pages
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Manufacturer  WILLSEMI [Will Semiconductor Ltd.]
Direct Link  http://www.willsemi.com/index.php?siteid=2
Logo WILLSEMI - Will Semiconductor Ltd.

WNMD2176 Datasheet(HTML) 4 Page - Will Semiconductor Ltd.

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WNMD2176
Will Semiconductor Ltd.
4
Typical Characteristics (Ta=25
oC, unless otherwise noted)
Output characteristics
On-Resistance vs. Drain current
On-Resistance vs. Junction temperature
Transfer characteristics
On-Resistance vs. Gate-to-Source voltage
Threshold voltage vs. Temperature
0.5
1.0
1.5
2.0
2.5
0
2
4
6
V
DS=5.0V
T=150
OC
T=25
OC
V
GS- Gate to Source Voltage(V)
-50
0
50
100
150
0.04
0.08
0.12
0.16
V
GS=1.8V ID=1.0A
V
GS=2.5V ID=1.5A
V
GS=4.5V ID=2.5A
Temperature(C)
-50
0
50
100
150
400
600
800
1000
I
D=250uA
Temperature (C)
0
5
10
15
20
0
2
4
6
V
GS=10V
V
GS=8V
V
GS=6V
V
DS-Drain-to-Source Voltage(V)
V
GS=5.5V
0
1
2
3
4
5
0
5
10
V
GS=1.8V
V
GS=2.5V 3V 4V 4.5V 6V
V
GS=2V
V
DS-Drain-to-Source Voltage(V)
V
GS=1.5V
0.01
0.1
1
10
0.02
0.04
0.06
0.08
0.10
0.12
0.14
V
GS=2.5V
V
GS=4.5V
I
DS-Drain-to-Source Current(A)
V
GS=2.5V
0
2
4
6
8
10
0.04
0.08
0.12
0.16
I
D=2.5A
V
GS-Gate to Source Voltage(V)
Jan, 2015 - Rev.1.0



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