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SS2H9 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SS2H9 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 3 page ![]() SS2H9 & SS2H10 Document Number 88750 28-Jun-05 Vishay Semiconductors www.vishay.com 1 DO-214AA (SMB) High-Voltage Surface Mount Schottky Rectifier High Barrier Tecnology for improved high temperature performance Major Ratings and Characteristics IF(AV) 2.0 A VRRM 90 V, 100 V IFSM 75 A VF 0.65 V IR 10 µA Tj max. 175 °C Features • Low profile package • Guardring for overvoltage protection • Ideal for automated placement • Low power losses, high efficiency • Low forward voltage drop • Low leakage current • High surge capability • Meets MSL level 1, per J-STD-020C • Solder Dip 260 °C 40 seconds Typical Applications For use in low voltage high frequency inverters, free- wheeling, dc-to-dc converters, and polarity protection applications Mechanical Data Case: DO-214AA (SMB) Epoxy meets UL 94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J- STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes the cathode end Maximum Ratings TA = 25 °C unless otherwise specified# Parameter Symbol SS2H9 SS2H10 Unit Device marking code MS9 MS10 Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at: TL = 130 °C IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A Peak repetitive reverse surge current at tp = 2.0 µs, 1 KHz IRRM 1.0 A Voltage rate of change (rated VR) dv/dt 10000 V/µs Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C |
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