深圳市晶导电子有限公司

深圳市晶导电子有限公司

深圳市晶导电子有限公司

深圳市晶导电子有限公司

BU103AD

www.jdsemi.cn

R

ShenZhen Jingdao Electronic Co.,Ltd.

Bipolar Junction Transistor

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C

Tel：0755-29799516

Fax：0755-29799515

第 1 页 2013 版

◆Si NPN

◆RoHS COMPLIANT

1

11

1．

．

．

．APPLICATION

Fluorescent Lamp、Electronic Ballast、

and Switch-mode power supplies

2

22

2．

．

．

．FEATURES

High voltage capability

Intergrated antiparallel collector-emitter diode

Features of good high temperature

High switching speed

3

33

3．

．

．

．PACKAGE

TO-92

4

44

4．

．

．

．Electrical Characteristics

4

44

4.1

.1

.1

.1 Absolute Maximum Ratings

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

650

V

Collector-Emittor Voltage

400

V

Emittor- Base Voltage

9

V

Collector Current

2

A

Ta=25℃

0.8

Power Dissipation

Tc=25℃

20

W

Junction Temperature

150

℃

Storage Temperature

-55～150

℃

4

44

4.2

.2

.2

.2 Electrical Parameter

VALUE

PARAMETER

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector-Base Voltage

650

V

Collector-Emittor Voltage

400

V

Emittor-Base Voltage

9

V

Collector-Base Cutoff Current

10

μA

Collector-Emittor Cutoff Current

20

μA

Emittor-Base Cutoff Current

10

μA

8

DC Current Gain

*

15

30

Collector-Emittor Saturation Voltage

*

0.6

V

Base-Emittor Saturation Voltage

*

1.2

V

Rising Time

1.0

Falling Time

0.8

Storage Time

2.1

3.1

μs

Typical Frequency

f=1MHz

5

MHz

＊: Pulse test tp≤300μs,δ≤2%

1 Base(B) 2 Collector(C) 3 Emitter(E)

1

VD