深圳市晶导电子有限公司

深圳市晶导电子有限公司

深圳市晶导电子有限公司

深圳市晶导电子有限公司

D882PC

www.jdsemi.cn

R

ShenZhen Jingdao Electronic Co.,Ltd.

Bipolar Junction Transistor

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C

Tel：0755-29799516

Fax：0755-29799515

第 1 页 2013 版

◆Si NPN

◆RoHS COMPLIANT

1

11

1．

．

．

．APPLICATION

Charger、Emergency lamp and

Electric toy control circuit

2

22

2．

．

．

．FEATURES

Features of good high temperature

High switching speed

3

33

3．

．

．

．PACKAGE

TO-252

4

44

4．

．

．

．Electrical Characteristics

4

44

4.1

.1

.1

.1 Absolute Maximum Ratings

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

40

V

Collector-Emittor Voltage

30

V

Emittor- Base Voltage

6

V

Collector Current

3

A

Ta=25℃

1.1

Power Dissipation

Tc=25℃

10

W

Junction Temperature

150

℃

Storage Temperature

-55～150

℃

4

44

4.2

.2

.2

.2 Electrical Parameter

VALUE

PARAMETER

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector-Base Voltage

40

V

Collector-Emittor Voltage

30

V

Emittor-Base Voltage

6

V

Collector-Base Cutoff Current

10

μA

Collector-Emittor Cutoff Current

10

μA

Emittor-Base Cutoff Current

10

μA

10

DC Current Gain

*

120

400

Collector-Emittor Saturation Voltage

*

0.8

V

Base-Emittor Saturation Voltage

*

1.2

V

Typical Frequency

f=10MHz

50

MHz

＊: Pulse test tp≤300μs,δ≤2%

1 Emitter(E) 2 Collector(C) 3 Base(B)

2

2

1