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EMBE0N10JS Datasheet(PDF) 4 Page - Excelliance MOS Corp. |
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EMBE0N10JS Datasheet(HTML) 4 Page - Excelliance MOS Corp. |
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4 / 5 page ![]() 2015/10/19 p.4 EMBE0N10JS Q ‐ Gate Charge( nC ) 0 0 2 4 g 3 6 I = 0.9A 6 8 10 D 9 12 50V V = 25V DS Gate Charge Characteristics V ‐ Drain‐Source Voltage( V ) 200 0 0 100 DS 20 Crss Coss 300 500 Ciss 40 60 80 GS f = 1M H z V = 0 V Capacitance Characteristics 100 50 150 250 450 400 350 DC V ‐ Drain‐Source Voltage( V ) V = 10V Single Pulse R = 166°C/W T = 25°C DS JA A GS R Lim it DS (O N) 0.01 0.1 1 10 100 100 m S 10m S 1m S 10 0u S Maximum Safe Operating Area 10 uS 10 100 1 1000 0.1 Single Pulse Maximum Power Dissipation 5 4 3 2 1 0 0.1 1 10 100 1000 Single Pulse Time( sec ) VGS= 10V SINGLE PULSE RθJA=166°C/W TA=25°C 1 0.5 0.2 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 t1 t2 TJ‐TA=P*RθJA(t) Duty Cycle, D= t1/ t2 RθJA=166°C/W RθJA(t) = r(t) * RθJA t1, Time( sec ) Transient Thermal Response Curve D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse |
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