0.5W Zener Diode - BZX55A* series

Rev 1.0

07/04/19

PARAMETER

SYMBOL

VALUE

UNIT

Power Dissipation

2

500

mW

Junction Temperature

200

°C

Storage Temperature Range

-65 to +200

°C

1

V

ZENER VOLTAGE

RANGE

TEST

CURRENT

REVERSE LEAKAGE CURRENT

DYNAMIC

RESISTANCE

f = 1 kHz

V

Ω

DEVICE

mA

µA Max.

V

Min.

 

Nom.

 

Max.

 

Max.

Max.

BZX55A2V4

2.376

2.4

2.424

5

1

50.0

100

1.0

85

600

BZX55A2V7

2.673

2.7

2.727

5

1

10.0

50

1.0

85

600

BZX55A3V0

2.97

3.0

3.03

5

1

4.0

40

1.0

85

600

BZX55A3V3

3.267

3.3

3.333

5

1

2.0

40

1.0

85

600

BZX55A3V6

3.564

3.6

3.636

5

1

2.0

40

1.0

85

600

BZX55A3V9

3.861

3.9

3.939

5

1

2.0

40

1.0

85

600

BZX55A4V3

4.257

4.3

4.343

5

1

1.0

20

1.0

75

600

BZX55A4V7

4.653

4.7

4.747

5

1

0.5

10

1.0

60

600

BZX55A5V1

5.049

5.1

5.151

5

1

0.1

2.0

1.0

35

550

BZX55A5V6

5.544

5.6

5.656

5

1

0.1

2.0

1.0

25

450

BZX55A6V2

6.138

6.2

6.262

5

1

0.1

2.0

2.0

10

200

BZX55A6V8

6.732

6.8

6.868

5

1

0.1

2.0

3.0

8.0

150

BZX55A7V5

7.425

7.5

7.575

5

1

0.1

2.0

5.0

7.0

50

BZX55A8V2

8.118

8.2

8.282

5

1

0.1

2.0

6.2

7.0

50

BZX55A9V1

9.009

9.1

9.191

5

1

0.1

2.0

6.8

10

50

1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may

reduce device reliability.

2. Assembled in DO-35 package. Performance in die form subject to assembly heat sinking and die attach methods.

Zener Voltages 10V to 75V are constructed using a larger die geometry.

Please see here for further details

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