CD4053B datasheet(1/6 Pages) SS

Part #	CD4053B

Description	CMOS High Voltage Logic

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Manufacturer	SS [Silicon Supplies]

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CMOS High Voltage Logic – CD4053B

Triple 2-Channel Analog Multiplexer/Demultiplexer in bare die form

Rev 1.0

08/09/18

The CD4053B is a digitally controlled Analog Switch

consisting of x3 separate digital control inputs, A, B, &

C plus inhibit input. Each control input selects one of a

pair of channels in SPDT configuration. Logic “1” at the

inhibit input switches all channels off. Logic-level

conversion of analog signals up to 18VP-P is achieved

via digital signal amplitudes of 4.5V to 18V (if VDD-VSS

= 3V, a VDD-VEE up to 13V can be controlled; for VDD-

VEE level differences >13V, VDD-VSS ≥ 4.5V is

required). Featuring low ON impedance & very low

OFF leakage current, quiescent power consumption is

extremely low across the full VDD-VSS & VDD-VEE range

and independent of control logic state.

Description

Break-before-make switch function eliminates

channel overlap

Supply voltage range: 3V to 18V

Analog voltage range (VDD - VEE) : 3V to 18V

ON resistance: 125Ω (typ) over 15VP-P signal

Channel leakage current: 100 nA ,VDD = 18V

Matched Switch Characteristics: RON = 10Ω

(max), VDD - VEE = 15V

Quiescent current : 0.2 μA, VDD = 15V

Binary address decoding on-chip

Features:

The following part suffixes apply:

Ordering Information

Die Dimensions in µm (mils)

2057 (81)

No suffix - MIL-STD-883 /2010B Visual Inspection

“H” - MIL-STD-883 /2010B Visual Inspection

+ MIL-PRF-38534 Class H LAT

“K” - MIL-STD-883 /2010A Visual Inspection (Space)

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

2057 x 1850

Die Size (Unsawn)

81 x 89

µm

mils

106 x 106

Minimum Bond Pad Size

4.17 x 4.17

µm

mils

Supply Formats:

Mechanical Specification

Default – Die in Waffle Pack (100 per tray capacity)

Sawn Wafer on Tape – On request

Unsawn Wafer – On request

635 (±20)

µm

Die Thickness

25 (±0.79)

mils

Die Thickness <> 635µm(25 Mils) – On request

Assembled into Ceramic Package – On request

Top Metal Composition

Al 1%Si 1.1µm

Back Metal Composition

N/A – Bare Si

Page 1 of 6

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