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CD4093B Datasheet(PDF) 1 Page - Silicon Supplies |
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CD4093B Datasheet(HTML) 1 Page - Silicon Supplies |
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1 / 6 page ![]() Page 1 of 6 www.siliconsupplies.com Die Size (Unsawn) 1560 x 1120 61 x 44 µm mils Minimum Bond Pad Size 100 x 100 3.94 x 3.94 µm mils Die Thickness 350 (±20) 13.78 (±0.79) µm mils Top Metal Composition Al 1%Si 1.1µm Back Metal Composition N/A – Bare Si CMOS High Voltage Logic – CD4093B Quadruple 2-Input NAND Gate Logic IC with Schmitt-Trigger Inputs in bare die form Rev 1.0 21/11/17 High Input Voltage up to 20V Schmitt-trigger on each input No limit on input rise and fall time Noise immunity greater than 50% Drives x2 Low-Power TTL loads or x1 LSTTL load Symmetrical Sink & Source Currents Direct drop-in replacement for obsolete components in long term programs. Features: The following part suffixes apply: No suffix - MIL-STD-883 /2010B Visual Inspection “H” - MIL-STD-883 /2010B Visual Inspection + MIL-PRF-38534 Class H LAT “K” - MIL-STD-883 /2010A Visual Inspection (Space) + MIL-PRF-38534 Class K LAT LAT = Lot Acceptance Test. For further information on LAT process flows see below. www.siliconsupplies.com\quality\bare-die-lot-qualification Supply Formats: Mechanical Specification Default – Die in Waffle Pack (400 per tray capacity) Sawn Wafer on Tape – On request Unsawn Wafer – On request Die Thickness <> 350µm(14 Mils) – On request Assembled into Ceramic Package – On request The CD4093B Quad 2-Input NAND Gate is fabricated using a 3µm 15CMOS process. This device consists of x4 Schmitt-trigger circuits. Each circuit functions as a 2-input NAND gate with Schmitt trigger action on both inputs. The gate switches at different points for positive & negative-going signals. The difference between the positive (VT+) & the negative voltage (VT−) is defined as hysteresis voltage (VH). Device hysteresis characteristics transform slowly changing input signals into sharply defined jitter-free output signals. Description Ordering Information Die Dimensions in µm (mils) 1560 (61) |
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