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8050 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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8050 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 8050 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 40 V BVCEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 25 V BVEBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.08A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.08A 1.2 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 0.1 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 μ A HFE-1 DC Current Gain IC= 100mA ; VCE= 1V 120 400 hFE-2 DC Current Gain IC= 800mA ; VCE= 1V 40 Classification of hFE Rank L H J Range 120-200 144-202 300-400 |
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