BCV62 datasheet(2/3 Pages) KEXIN

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SMD Type

MOSFET

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

V(BR)CBO

IC = -10 μA, IE = 0

-30

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = -10 mA, IB = 0

-30

Emitter-Base Breakdown Voltage

V(BR)EBO

IC = -10 μA, IC = 0

-6

Collector cutoff current

ICBO

VCB=-30V, IE=0

-15

Emitter cutoff current

IEBO

VEB=-5V, IC=0

-100

VCE=-5V, IC= -100μA

100

VCE=-5V, IC=-2mA

100

800

IC = -10 mA; IB = -0.5 mA

-0.3

IC = -100 mA; IB = -5 mA

-0.65

IC = -10 mA; IB = -0.5 mA

-0.7

IC = -100 mA; IB = -5 mA

-0.85

Collector capacitance

IE = ie = 0; VCB = -10 V; f = 1 MHz

4.5

Transition frequency

IC = -10 mA; VCE = -5 V; f = 100 MHz

100

MHz

Noise figure

IC =-200μ A; VCE =-5 V; RS =2kΩ; f = 1 kHz;

B = 200 Hz

VCB = 0; IE = 250 mA

1.5

VCB = 0; IE

0.4

DC current gain

BCV62A

125

250

BCV62B

220

475

BCV62C

420

800

* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.

hFE

IC = -2 mA; VCE = -5 V

Transistor TR1

Transistor TR2

Base-emitter forward voltage

VEBS

hFE

DC current gain

collector-emitter saturation voltage *

VCE(sat)

VBE(sat)

base-emitter saturation voltage *

■ Marking

TYPE

BCV61

BCV61A

BCV61B

BCV61C

Marking

3MP

3JP

3KP

3LP

= 10μA

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BCV62

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