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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
1
2
3
4
RF3315
BROADBAND HIGH LINEARITY AMPLIFIER
• Basestation Applications
• Cellular and PCS Systems
• WLL, W-CDMA Systems
• Final PA for Low-Power Applications
The RF3315 is a high-efficiency GaAs Heterojunction
Bipolar Transistor (HBT) amplifier packaged in a low-cost
surface-mount package. This amplifier is ideal for use in
applications requiring high-linearity and low noise figure
over the 300MHz to 3GHz frequency range. The RF3315
operates from a single 5V power supply.
• 300MHz to 3GHz
• +40dBm Output IP3
• 12.5dB Gain at 2.0GHz
• +23dBm P1dB
• 3.0dB Typical Noise Figure at 2.0GHz
• Single 5V Power Supply
RF3315
Broadband High Linearity Amplifier
RF3315PCBA-410 Fully Assembled Evaluation Board (2GHz)
RF3315PCBA-411 Fully Assembled Evaluation Board (900MHz)
0
Rev A9 050310
Shaded lead is pin 1.
Dimensions in mm.
0.43
0.38
1.60
1.40
1.75
1.40
1.80
1.45
0.53
0.41
1.04
0.80
0.50
0.30
4.60
4.40
2.60
2.40
3.10
2.90
0.48
0.36
2 PL
Package Style: SOT89
Pb-Free Product
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