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FTD2011 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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FTD2011 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  www.kexin.com.cn 1 SMD Type MOSFET TSSOP-8 Unit: mm Dual N-Channel Enhancement Mode MOSFET FTD2011 ■ Features ● RDS(ON)=30mΩ Max. @VGS=4V ● RDS(ON)=45mΩ Max. @VGS=2.5V ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Drain-Current -Continuous ID 5 A -Pulsed (NOTE 1) IDM 20 A Power Dissipation (NOTE 2) PD 1.3 W Thermal Resistance,Junction- to-Ambient RθJA 96 ℃/W Operating Junction and Storage Temperature Range Tj.Tstg -55 to 150 ℃ Note: 1. PW≤10μs, duty cycle≤1% 2. Mounted on a ceramic board (1000mm 2×0.8mm) 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 D2 D1 S1 S1 G1 S2 S2 G2 |
Similar Part No. - FTD2011 |
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