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M29DW128F Datasheet(PDF) 1 Page - STMicroelectronics |
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M29DW128F Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 93 page ![]() PRELIMINARY DATA This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Rev 1.0 August 2005 1/93 1 M29DW128F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage –VCC = 2.7V to 3.6V for Program, Erase and Read –VCCQ= 1.65V to 3.6V for Input/Output –VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical – 4 Words / 8 Bytes Program – 32-Word Write Buffer ■ ERASE VERIFY ■ MEMORY BLOCKS – Quadruple Bank Memory Array: 16Mbit+48Mbit+48Mbit+16Mbit – Parameter Blocks (at Top and Bottom) ■ DUAL OPERATIONS – While Program or Erase in one bank, Read in any of the other banks ■ PROGRAM/ ERASE SUSPEND and RESUME MODES – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend ■ UNLOCK BYPASS PROGRAM – Faster Production/Batch Programming ■ COMMON FLASH INTERFACE – 64 bit Security Code ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK ■ LOW POWER CONSUMPTION – Standby and Automatic Standby ■ HARDWARE BLOCK PROTECTION –VPP/WP Pin for fast program and write protect of the four outermost parameter blocks ■ SECURITY FEATURES – Standard Protection – Password Protection ■ EXTENDED MEMORY BLOCK – Extra block used as security block or to store additional information ■ ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code: 227Eh + 2220h + 2200h ■ ECOPACK® PACKAGES AVAILABLE BGA TSOP56 (NF) 14 x 20mm TBGA64 (ZA) 10 x 13mm www.st.com |
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