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ISCNL74D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNL74D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNL74D · FEATURES · Static drain-source on-resistance: RDS(on)≤4.6mΩ · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 108 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation @TC=25℃ 83 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.5 ℃ /W |
Similar Part No. - ISCNL74D |
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Similar Description - ISCNL74D |
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