MMST5551 datasheet(1/1 Pages) KEXIN

Part #	MMST5551

Description	NPN Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

MMST5551 (KMST5551)

■

Features

●

Small Surface Mount Package

●

Ideal for Medium Power Amplification and Switching

●

Complementary to MMST5401

1.Base

2.Emitter

3.Collector

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

180

Collector - Emitter Voltage

VCEO

160

Emitter - Base Voltage

VEBO

6

Collector Current - Continuous

IC

600

mA

Collector Power Dissipation

PC

200

mW

Thermal Resistance From Junction To Ambient

RΘJA

625

℃

/W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

180

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0 (Note.1)

160

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

6

Collector-base cut-off current

ICBO

VCB= 120 V , IE= 0

50

Emitter cut-off current

IEBO

VEB= 4V , IC=0

50

IC=10 mA, IB=1mA

0.15

IC= 50 mA, IB= 5mA

0.2

IC=10 mA, IB=1mA

1

IC= 50 mA, IB= 5mA

1

hFE(1)

VCE= 5V, IC= 1mA

80

hFE(2)

VCE= 5V, IC= 10mA

80

300

hFE(3)

VCE= 5V, IC= 50mA

30

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

6

pF

Transition frequency

fT

VCE= 10V, IC= 10mA,f=100MHz

100

300

MHz

VBE(sat)

Base - emitter saturation voltage

V

DC current gain

V

nA

Collector-emitter saturation voltage

VCE(sat)

■

Marking

K4N

Note.1: Pulse test: pulse width ≤300 us,duty cycle≤ 2 %.

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MMST5551 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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