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ISCP58P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCP58P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc Website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor ISCP58P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -300 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.2 V ICBO Collector Cutoff Current VCB= -300V; IE= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μ A hFE DC Current Gain IC= -50mA ; VCE= -8V 50 250 fT Current-Gain—Bandwidth Product IE= -0.5A ; VCE= -12V 30 MHz |
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