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ISCP59P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCP59P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ISCP59P DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -350V (Min) · Good Linearity of hFE · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in DC/DC converter and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -7 A ICM Collector Current-Pulse -14 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Similar Part No. - ISCP59P |
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Similar Description - ISCP59P |
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