KXF2955 datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel MOSFET

KXF2955

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-60

VDS=-48V, VGS=0V

VDS=-48V, VGS=0V, TJ=70℃

Gate-Body leakage current

IGSS

VDS=0V, VGS=±20V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-1

-2.5

VGS=-10V, ID=-3A

100

VGS=-4.5V, ID=-2.7A

120

Forward Transconductance

gFS

VDS=-5V, ID=-3A

5.8

Input Capacitance

Ciss

929

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Gate Source Charge

Qgs

Gate Drain Charge

Qgd

3.4

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Maximum Body-Diode Continuous Current

-3.5

Body-Diode Pulsed Current

ISM

-20

Diode Forward Voltage

VSD

IS=-2A,VGS=0V

-1.2

VGS=0V, VDS=-30V, f=1MHz

VGS=-10V, VDS=-30V, ID=-3.5A

IF=-2A, VGS=0V, dI/dt=100A/μs

Zero Gate Voltage Drain Current

IDSS

mΩ

VGS=-10V, VDS=-30V, ID=-1A,RG=6Ω

RDS(On)

Static Drain-Source On-Resistance

Note:Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

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