HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE200308

Issued Date : 2003.11.01

Revised Date : 2003.11.28

Page No. : 1/4

HBT139XE

HSMC Product Specification

HBT139XE

Three Quadrant Triac

Description

Passivated, sensitive gate triacs in a plastic envelope, intended for use in

general purpose bidirectional switching and phase control applications,

where high sensitivity is required in all four quadrants.

Quick Reference Data

Part No.

V

I

I

Quadrant

HBT139DE

600

16

140

I - II - III

Pin Configuration

Pin

Description

1

Main terminal 1

2

Main terminal 2

3Gate

tab

Main terminal 2

123

tab

Symbol

T2

T1

G

Limtiing Values

Symbol

Parameter

Min.

Max.

Units

V

DRM

Repetitive peak off-state voltages

-

600

V

I

T(RMS)

RMS on-state current

-

16

A

I

TSM

Non-repetitive peak on-state current

-

140

A

I

-

98

A

Repetitive rate of rise of on-state current after triggering

T2+ G+

-50

A/us

T2+ G-

-

50

A/us

T2- G-

-

50

A/us

dI

T2- G+

-

-

A/us

I

GM

Peak gate current

-

2

A

V

GM

Peak gate voltage

-

10

V

P

GM

Peak gate power

-

5

W

P

G(AV)

Average gate power

-

0.5

W

Tstg

Storage Temperature Range

-

150

°C

Tj

Operating junction temperature

-40

125

°C

TO-220AB