MMBTH10 datasheet(1/3 Pages) KEXIN

Part #	MMBTH10

Description	NPN Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

MMBTH10 (KMBTH10)

■

Features

●

Collector Current Capability IC=0.05A

●

Collector Emitter Voltage VCEO=25V

0.4 +0.1

-0.1

2.9 +0.1

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.1

1.Base

2.Emitter

3.Collector

1

2

3

Unit: mm

SOT-23

0.1 +0.05

-0.01

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

30

Collector - Emitter Voltage

VCEO

25

Emitter - Base Voltage

VEBO

3

Collector Current - Continuous

IC

0.05

A

Collector Power Dissipation

PC

225

mW

Thermal Resistance Junction to Ambient

RθJA

556

℃

/W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to +150

V

℃

■

Classification of hfe

Marking

3EM

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

30

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

25

Emitter - base breakdown voltage

VEBO

IE= 10μA， IC= 0

3

Collector-base cut-off current

ICBO

VCB=25 V , IE= 0

100

Emitter cut-off current

IEBO

VEB= 2V , IC=0

100

Collector-emitter saturation voltage

VCE(sat)

IC=4 mA, IB=0.4mA

0.5

Base - emitter saturation voltage

VBE(sat)

IC=4 mA, IB=0.4mA

1.2

Base - emitter saturation voltage

VBE

VCE=10V,IC= 4 mA

0.95

DC current gain

hFE

VCE= 10V, IC= 4mA

60

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

0.7

pF

Transition frequency

fT

VCE= 10V, IC= 4mA,f=100MHz

650

MHz

V

nA

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MMBTH10 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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