Rev.3.00, Feb.02.2004, page 1 of 26

HN58V65AI Series

HN58V66AI Series

HN58V65A-SR Series

HN58V66A-SR Series

64k EEPROM (8-kword

× 8-bit)

Ready/

Busy function, RES function (HN58V66A)

Wide Temperature Range version

REJ03C0153-0300Z

(Previous ADE-203-759B(Z) Rev.2.0)

Rev. 3.00

Feb.02.2004

Description

Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and

programmable EEPROM’s organized as 8192-word

× 8-bit. They have realized high speed, low power

consumption and high reliability by employing advanced MNOS memory technology and CMOS process

and circuitry technology. They also have a 64-byte page programming function to make their write

operations faster.

Features

• Single supply: 2.7 to 5.5 V

• Access time:

 100 ns (max) at 2.7 V ≤ V

 70 ns (max) at 4.5 V ≤ V

CC

≤ 5.5 V

• Power dissipation:

 Active: 20 mW/MHz (typ)

 Standby: 110 µW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 10 ms (max)

• Automatic page write (64 bytes): 10 ms (max)

• Ready/Busy

• Data polling and Toggle bit

• Data protection circuit on power on/off