IXYS reserves the right to change limits, test conditions, and dimensions.

IXTQ 110N10P

IXTT 110N10P

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,381,025

6,162,665

6,306,728 B1 6,534,343

6,683,344

one or moreof the following U.S. patents:

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,486,715

6,259,123B1 6,404,065B1 6,583,505

6,710,405B2

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

30

40

S

C

iss

3550

pF

C

oss

V

1370

pF

C

rss

440

pF

t

d(on)

21

ns

t

r

V

25

ns

t

d(off)

R

65

ns

t

f

25

ns

Q

g(on)

110

nC

Q

gs

V

25

nC

Q

gd

62

nC

R

thJC

0.31 K/W

R

thCK

(TO-3P)

0.21

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

typ.

Max.

I

S

V

110

A

I

SM

Repetitive

250

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

130

ns

-di/dt = 100 A/

µs

Q

RM

V

2.0

µC

TO-268 Outline

TO-3P (IXTQ) Outline