7-251

9

BV

I

D(ON)

Order Number / Package

(max)

(min)

TO-92

-40V

25

Ω

-0.25A

VP1304N3

-60V

25

Ω

-0.25A

VP1306N3

-100V

25

Ω

-0.25A

VP1310N3

VP1304

VP1306

VP1310

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Note: See Package Outline section for dimensions.

P-Channel Enhancement-Mode

Vertical DMOS FETs

Package Options

Features

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Applications

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

± 20V

Operating and Storage Temperature

-55

°C to +150°C

Soldering Temperature*

300

°C

* Distance of 1.6 mm from case for 10 seconds.

Ordering Information

TO-92

S G D