SI2399DS datasheet(4/6 Pages) KEXIN

Part #	SI2399DS

Description	P-Channel MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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4 / 6 page

SMD Type

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MOSFET

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Typical Characterisitics

Source-Drain Diode Forward Voltage

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

TJ = 150 °C

TJ = 25 °C

On-Resistance vs. Gate-to-Source Voltage

0.02

0.04

0.06

0.08

VGS - Gate-to-Source Voltage (V)

TJ = 125 °C

TJ = 25 °C

ID = 5.1 A

Threshold Voltage

0.5

0.7

0.8

1.0

1.1

- 50

- 25

100

125

150

TJ - Temperature (°C)

ID = 250 µA

Single Pulse Power

0.01

0.1

100

1000

Time (s)

TA = 25 °C

Safe Operating Area

0.01

0.1

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on)

100 ms

Limited by RDS(on)*

1 ms

TC = 25 °C

Single Pulse

BVDSS Limited

10 ms

100 µs

1 s, 10 s

P-Channel MOSFET

SI2399DS (KI2399DS)

SI2399DS Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

SI2399DS Datasheet(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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