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WPM2005B Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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WPM2005B Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 5 page ![]() SMD Type www.kexin.com.cn 1 MOSFET P+Schottky Hybrid MOSFET WPM2005B (KPM2005B) ■ Features ● VDS (V) =-20V ● ID =-2.7 A (VGS =-10V) ● RDS(ON) < 125mΩ (VGS =-4.5V) ● RDS(ON) < 160mΩ (VGS =-2.5V) ● Ultra Low VF Schottky DFN3X2-8L 0.35 (max) 0.24 (min) 0.65 BSC 0.80 ± 0.1 0.25 (max) 0.08 (min) 0.05 (max) 3.00 BSC Unit:mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol MOSFET Schottky Unit Drain-Source Voltage VDS -20 - Gate-Source Voltage VGS ± 8 - Peak Repetitive Reverse Voltage VRRM - 20 DC Blocking Voltage VR - 20 Continuous Drain Current ID -2.7 - Pulsed Drain Current IDM -10 - Average Rectified Forward Current IF - 1 Power Dissipation PD 1.1 - W Thermal Resistance.Junction- to-Ambient RthJA 110 - ℃ /W Junction Temperature TJ Junction Storage Temperature Range Tstg ℃ V A 150 -55 to 150 8 7 6 5 4 3 2 1 C C D D A A S G |
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