Transistors

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2

MOSFET

SMD Type

Notes:

(d) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This

allows the device to be used in the fully on state without interference from the current limit. The device is fully

protected at all drain currents, as the low power dissipation generated outside saturation makes current limit

unnecessary.

(e) Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are

considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for

extended periods.

N-Channel Self Protected

Enhancement Mode MOSFET

ZXMS6004FF(KXMS6004FF)

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Clamp Voltage

60

70

V

500

nA

1

A

Input threshold voltage

0.7

1.5

V

Input Current

100

Input Current

200

Input current while over temperature active

220

600

500

Continuous drain current

(a)

0.9

A

Continuous drain current

(a)

1A

Continuous drain current

(b)

1.2

A

Continuous drain current

(b)

1.3

A

Current limit

0.7

A

Current limit

(d)

1

A

Dynamic characteristics

Turn-On DelayTime

5

Rise Time

10

Turn-Off DelayTime

45

Fall Time

15

Over-temperature protection

Thermal overload trip temperature

(e)

TJT

150

175

Thermal hysteresis

(e)

10

A

s

Off-state drain Current

m

Static Drain-Source On-Resistance

Marking

Marking

1K6