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15C01SS Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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15C01SS Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 15C01SS No.7508-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 20 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 15 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 V Turn-ON Time ton See specified Test Circuit. 30 ns Storage Time tstg See specified Test Circuit. 77 ns Fall Time tf See specified Test Circuit. 40 ns Switching Time Test Circuit VR RB VCC=5V VBE= --5V + + 50 Ω INPUT OUTPUT RL 220 µF 470 µF PW=20 µs IB1 D.C. ≤1% IB2 IC=20IB1= --20IB2=500mA 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 100 200 300 400 600 500 700 800 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 0.4 0.8 1.2 1.6 0.2 0.6 1.0 1.4 1.8 2.0 10 2 3 5 7 100 2 3 5 7 1000 3 5 7 100 2 3 5 7 1000 1.0 23 5 7 10 23 5 7 100 23 5 7 1000 IT05492 IT05493 IT05490 IT05491 0 40 80 120 160 200 20 60 100 140 180 IB=0 0.1mA 0.2mA 0.3mA 0.4mA 0.5mA 0.6mA 0.7mA 0.8mA VCE=2V VCE=2V IC / IB=20 Ta=75 °C --25 °C 25 °C Ta=75 °C --25 °C 25 °C hFE -- IC IC -- VCE IC -- VBE VCE(sat) -- IC Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- mA Collector Current, IC -- mA |
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