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IRF232 Datasheet(PDF) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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IRF232 Datasheet(HTML) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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3 / 6 page ![]() IRF230-233/IRF630-633 MTP12N18/12N20 N-Channel Power Mosfets 12A, 150-200V www.artschip.com 3 Electrical Characteristics(Cont.)(Tc=25℃ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions On Characteristics 2.0 4.0 VGS(th) Gate Threshold Voltage IRF230/233/630/633 MTP12N18/12N20 2.0 4.5 V ID=250µA, VDS=VGS ID=1mA, VDS=VGS 0.40 0.50 RDS(on) Static Drain-Source On-Resistance 2 IRF230/231/630/631 IRF232/233/632/633 MTP12N18/12N20 0.35 Ω VGS=10V, ID=5.0A ID=6.0A 2.1 V VGS=10V; ID=6.0A 5.0 V VGS=10V; ID=12.0A; VDS(on) Drain-Source On-Voltage 2 MTP12N18/12N20 4.2 V VGS=10V; ID=6.0A Tc=100℃ gfs Forward Transconductance 3.0 S( ) VDS=10V; ID=6.0A Tc=100℃ Dynamic Characteristics Ciss Input Capacitance 800 pF Coss Output Capacitance 450 pF Crss Reverse Transfer Capacitance 150 pF VDS=25V, VGS=0V f=1.0MHz Switching Characteristics (Tc=25℃, Figure 1,2) 1 td(on) Turn-On Delay Time 30 ns tr Rise Time 50 ns td(off) Turn-Off Delay Time 50 ns tf Fall Time 40 ns VDD=90V, ID=5.0A VGS=10V, RGEN=15 Ω RGS=15 Ω td(on) Turn-On Delay Time 50 ns tr Rise Time 250 ns td(off) Turn-Off Delay Time 100 ns tf Fall Time 120 ns VDD=25V; ID=6.0A VGS=10V, RGEN=50 Ω RGS=50 Ω Qg Total Gate Charge 30 ns VGS=10V, ID=12A VDD=120V Electrical Characteristics (Cont.)(Tc=25℃ unless otherwise noted) Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics 1.25 2.0 V Is=9.0A; VGS=0V VSD Diode Forward Voltage IRF230/231/630/831 IRF232/233/632/633 1.25 1.8 V Is=8.0A; VGS=0V trr Reverse Recovery Time 450 ns Is=4.0A; Is/dt=25A/µs Notes 1. TJ=+25℃ to +160℃ 2. Pulse width limited by TJ. 3. Switching time measurements performed on LEM TR-58 equipment. |
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