IRF520 datasheet(3/5 Pages) ARTSCHIP

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IRF120-123/IRF520-523

MTP10N08/10N10

N-Channel Power Mosfets,

11A,60-100V

www.artschip.com

Electrical Characteristics

(Cont.) (Tc=25℃ unless otherwise noted)

Symbol

Characteristic

Min

Max

Unit

Test Conditions

On Characteristics

2.0

4.0

VGS(th)

Gate Threshold Voltage

IRF12-123/IRF520-523

MTP10N08/10N10

2.0

4.5

ID=250µA, VDS=VGS

ID=1mA, VDS=VGS

0.30

0.33

RDS(on)

Static Drain-Source On-Resistance

IRF120/121/520/521

MTP10N08/10N10

IRF122/123/522/523

0.40

Ω

VGS=10V

ID=4.0A

ID=5.0A

ID=4.0A

4.0

VGS=10V; ID=10.0A

VDS(on)

Drain-Source On-Voltage

MTP 10N08/10N10

3.3

VGS=10V, ID=5.0A

Tc=100℃

gfs

Forward Transconductance

1.5

S( )

VDS=10V, ID=4.0A

Dynamic Characteristics

Ciss

Input Capacitance

600

Coss

Output Capacitance

400

Crss

Reverse Transfer Capacitance

100

VDS=25V, VGS=0V

f=1.0MHz

Switching Characteristics (Tc=25℃, Figure 1,2)

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

100

Fall Time

VDD=50V, ID=4.0A

VGS=10V,RGEN=50 Ω

RGS=50 Ω

Total Gate Charge

VGS=10V, ID=10A

VDD=50V

Symbol

Characteristic

Typ

Max

Unit

Test Conditions

Source-Drain Diode Characteristics

2.5

IS=8.0A; VGS=0V

VSD

Diode Forward Voltage

IRF120/121/520/521

IRF122/123/522/523

2.3

IS=7.0A; VGS=0V

trr

Reverse Recovery Time

280

IS=4.0A; dls/dt=25A/

Notes

TJ=+25℃ to +150℃

Pulse width limited by TJ

Switching time measurements performed on LEM TR-58 test equipment.

IRF520 Datasheet(PDF) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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