IRF510 datasheet(2/5 Pages) ARTSCHIP

2 / 5 page

IRL510-513

N-Channel Power Mosfets

www.artschip.com

Electrical Characteristics

(Tc=25℃ unless otherwise noted)

Symbol

Characteristic

Min

Max

Unit

Test Conditions

Off Characteristics

100

V(BR)DSS

Drain Source Breakdown Voltage1

IRF510/512/MTP4N10

MTP4N08

IRF511/513

VGS=0V, ID=250µA

250

µA

VDS=Rated VDSS, VGS=0V

IDSS

Zero Gate Voltage Drain Current

100

µA

VDS=0.8 x Rated VDSS,

VGS=0V, Tc=125℃

IGSS

Gate-Body Leakage Current

±500

VGS=±20V, VDS=0V

On Characteristics

2.0

4.0

VGS(th)

Gate Threshold Voltage

IRF510-513

MTP4N08/10

2.0

4.5

ID=250µA,VDS=VGS

ID=1mA, VDS=VGS

0.60

RDS(on)

Static Drain-Source On-Resistance

IRF510/511

IRF512/513/MTP4N08/4N10

0.80

Ω

VGS=10V, ID=2.0A

VDS(on)

4.8

VGS=10V; ID=4.0A

Drain-Source On-Voltage

MTP4N08/4N10

3.2

VGS=10V; ID=2.0A;

TC=100℃

gfs

Forward Transconductance

1.0

S( )

VDS=10V, ID=2.0A

Dynamic Characteristics

Ciss

Input Capacitance

200

Coss

Output Capacitance

100

Crss

Reverse Transfer Capacitance

VDS=25V, VGS=0V

F=1.0MHz

Switching Characteristics

(Tc=25℃, Figure 11,12)

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

VDD=50V, ID=2.0A

VGS=10V, RGEN=50 Ω

RGS=50 Ω

Total Gate Charge

7.5

VGS=10V, ID=8.0A

VDD=40V

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