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IRF640 Datasheet(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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IRF640 Datasheet(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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2 / 6 page  IRF640, RF1S640,RF1S640SM 18A, 200V, 0.180 Ohm, N-Channel Power Mosfets www.artschip.com 2 Electrical Specifications Tc=25℃, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown BVDSS ID=250µA, VGS=0V, (Figure 10) 200 - - V Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250µA 2 - 4 V VDS=Rated BVDSS, VGS=0V - - 25 µA Zero Gate Voltage Drain Current IDSS VDS=0.8 x Rated BVDSS, VGS=0V, TJ=125℃ - - 250 µA On-State Drain Current (Note 1) ID(ON) VDS>ID(ON) x rDS(ON)MAX, VGS=10V (Figure 7) 18 - - A Gate to Source Leakage Current IGSS VGS=±20V - - ±100 nA Drain to Source On Resistance(Note1) ID(ON) ID=10A, VGA=10V (Figure8,9) - 0.14 0.18 Ω Forward Transconductance (Note1) gfs VDS≥10V, ID=11A (Figure 12) 6.7 10 - S Turn-On Delay Time td(ON) - 13 21 ns Rise Time tr - 50 77 ns Turn-Off Delay Time td(OFF) - 46 68 ns Fall Time tf VDD=100V, ID=18A, RGS=9.1 Ω, RL=5.4 Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature - 35 54 ns Total Gate Charge (Gate to Source +Gate to Drain) Qg(TOT) - 43 64 nC Gate to Source Charge Qgs - 8 - nC Gate to Drain “Miller” Charge Qgd VGS=10V, ID=18A, VDS=0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating Temperature IG(REF)=1.5mA - 22 - nC Input Capacitance CISS - 1275 - pF Output Capacitance COSS - 400 - pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, F=1MHz (Figure 11) - 100 - pF Measured From the contact Screw on Tab to Center of Die - 3.5 - nH Internal Drain Inductance LD Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die - 4.5 - nH Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances - 7.5 - nH Thermal Resistance Junction to Case R ӨJC - - 1 ℃ /W R ӨJA Free Air Operation, IRF640 - - 62 ℃ /W Thermal Resistance Junction to Ambient R ӨJA RF1S640SM Mounted on FR-4 Board with Minimum Mounting Pad - - 62 ℃ /W Source to Drain Diode Specifictions PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current ISD - - 18 A Pulse Source to Drain Current (Note 2) ISDM Modified MOSFET Symbol Showing the integral Reverse P-N Junction Diode - - 72 A Source to Drain Diode Voltage (Note 2) VSD TJ=25℃, ISD=18A, VGS=0V, (Figure 13) - - 2.0 V Reverse Recovery Time trr TJ=25℃, ISD=18A, dISD/dt=100A/µs 120 240 530 ns Reverse Recovery Charge Qrr TJ=25℃, ISD=18A, dISD/dt=100A/µs 1.3 2.8 5.6 µC NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD=50V, starting TJ=25℃, L=3.37mH, RG=25 Ω, peak IAS=18A. |
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