IRF3205

HEXFET ® Power MOSFET

www.artschip.com

2

Parameter

Min.

Typ.

Max.

Units

Conditions

Drain-to-Source Breakdown Voltage

55

-

-

V

Breakdown Voltage Temp. Coefficient

-

0.057

-

V/℃

Static Drain-to-Source On-Resistance

-

-

8.0

mΩ

Gate Threshold Voltage

2.0

-

4.0

V

gfs

Forward Transconductance

44

-

-

S

-

-

25

Drain-to-Source Leakage Current

-

-

250

µA

Gate-to-Source Forward Leakage

-

-

100

Gate-to-Source Reverse Leakage

-

-

-100

nA

Qg

Total Gate Charge

-

-

146

Qgs

Gate-to-Source Charge

-

-

35

Qgd

Gate-to-Drain (“Miller”) Charge

-

-

54

nC

td(on)

Turn-On Delay Time

-

14

-

tr

Rise Time

-

-101

-

td(off)

Turn-On Delay Time

50

-

tf

Fall Time

-

65

-

ns

Internal Drain Inductance

-

4.5

-

Internal Source Inductance

-

7.5

-

nH

Between lead,

6mm (0.25in.)

From package

And center of

die contact

Ciss

Input Capacitance

-

3247

-

Coss

Output Capacitance

-

781

-

Crss

Reverse Transfer Capacitance

-

211

-

pF

f=1.0MHz, See Fig.5

Single Pulse Avalanche Energy ②

-

1050⑥

264⑦

mJ

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

-

-

110

Pulsed Source Current

(Body Diode) ①

-

-

390

A

MOSFET symbol

showing

the

integral

reverse

p-n junction diode.

Diode Forward Voltage

-

-

1.3

V

trr

Reverse Recovery Time

-

69

104

ns

Qrr

Reverse Recovery Charge

-

143

215

nC

di/dt=100A/µS④

ton

Forward Turn-On Time

Notes:

①

Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)

②

③

④

Pulse width ≤400µs; duty cycle ≤2%.

⑤

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.

⑥

This is a typical value at device destruction and represents operation outside rated limits.

⑦