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IRFP150N Datasheet(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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IRFP150N Datasheet(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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1 / 7 page  IRFP150N HEXFET Power MOSFET www.artschip.com 1 FEATURES Avalanche Process Technology Dynamic dv/dt Rating 175℃ Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from Artschip utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. VDSS=100V RDS(on)=0.036W ID=42A TO-3P Absolute Maximum Ratings Parameter Max. Units ID @ Tc=25℃ Continuous Drain Current, VGS @10V 42 ID @ Tc=100℃ Continuous Drain Current, VGS @10V 30 IDM Pulsed Drain Current ①⑤ 140 A PD @ Tc=25℃ Power Dissipation 160 W Linear Derating Factor 1.1 W/℃ VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ②⑤ 420 mJ IAR Avalanche Current ①⑤ 22 A EAR Repetitive Avalanche Energy ① 16 mJ dv/dt Peak Diode Recovery dv/td ③⑤ 5.0 V/ns TJ TSTG Operating Junction and Storage Temperature Range -55 to +175 Soldering Temperature, for 10 seconds 300 (1.6mm from case) ℃ Mounting torque, 6-32 or M3 srew 10 Ibf•in (1.1N•m) Thermal Resistance Parameter Typ. Max. Units RQJC Junction-to-Case - 0.95 RQCS Case –to-Sink, Flat, Greased Surface 0.24 - RQJA Junction-to-Ambient - 40 ℃ /W |
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