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IRFZ10 Datasheet(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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IRFZ10 Datasheet(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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1 / 7 page  IRFZ10 HEXFET ® Power MOSFET www.artschip.com 1 Dynamic dv/dt Rating 175℃ Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS=60V RDS(on) =0.20Ω ID=10A G:Gate D: Drain S: Source Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID@ Tc=25℃ Continuous Drain Current, VGS @ 10V 10 ID@ Tc=100℃ Continuous Drain Current, VGS @ 10V 7.2 IDM Pulsed Drain Current ① 40 A PD@ TC=25℃ Power Dissipation 43 W Linear Derating Factor 0.29 W/℃ VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ② 47 mJ dv/dt Peak Diode Recovery dv/dt ③ 4.5 V/ns TJ TSTG Operating Junction and Storage Temperature Range -55 to +175 Soldering Temperature, for 10 seconds 300 (1.8mm from case) ℃ Mounting Torque, 6-32 or M3 screw 10 Ibf •in (1.1N•m) Thermal Resistance Parameter Min. Typ. Max. Units RӨJC Junction-to-Case - - 3.5 RӨCS Case-to-Sink, Flat, Greased Surface - 0.50 - RӨJA Junction-to-Ambient - - 62 ℃ /W Electrical Characteristics @ TJ=25℃ (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS=0V, ID=250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient - 0.063 - V/℃ Reference to 25℃,ID=1mA RDS(on) Static Drain-to-Source On-Resistance - - 0.20 Ω VGS=10V, ID=6.0A VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, ID=250µA gfs Forward Transconductance 2.4 - - S VDS=25V, ID=6.0A - - 25 VDS=60V, VGS=0V IDSS Drain-to-Source Leakage Current - - 250 µA VDS=48V, VGS=0V, TJ=150℃ Gate-to-Source Forward Leakage - - 100 VGS=20V IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS=-20V Qg Total Gate Charge - - 11 Qgs Gate-to-Source Charge - - 3.1 Qgd Gate-to-Drain (“Miller”) Charge - - 5.8 nC ID=10A VDS=48V VGS=10V See Fig. 6 and 13④ td(on) Turn-On Delay Time - 10 - tr Rise Time - 50 - td(off) Turn-Off Delay Time - 13 - tf Fall Time - 19 - ns VDD=30V ID=10A RG=24Ω RD=2.7Ω See Figure 10④ LD Internal Drain Inductance - 4.5 - LS Internal Source Inductance - 7.5 - nH Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance - 300 - Coss Output Capacitance - 160 - Crss Reverse Transfer Capacitance - 29 - pF VGS=0V VDS=25V F=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics |
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