IRL630

HEXFET Power Mosfet

www.artschip.com

2

Parameter

Min.

Typ.

Max.

Units

Conditions

Drain-to-Source Breakdown Voltage

200

-

-

V

Breakdown Voltage Temp. Coefficient

-

0.27

-

V/℃

-

-

0.40

Static Drain-to-Source On-Resistance

-

-

0.50

Ω

Gate Threshold Voltage

1.0

-

2.0

V

gfs

Forward Transconductance

4.8

-

-

s

-

-

25

Drain-to-Source Leakage Current

-

-

250

µA

Gate-to-Source Forward Leakage

-

-

100

Gate-to-Source Reverse Leakage

-

-

-100

nA

Qg

Total Gate Charge

-

-

40

Qgs

Gate-to-Source Charge

-

-

5.5

Qgd

Gate-to-Drain (“Miller”) Charge

-

-

24

nC

Turn-On Delay Time

-

8.0

-

tr

Rise Time

-

57

-

Turn-Off Delay Time

-

38

-

tf

Fall Time

-

33

-

ns

Internal Drain Inductance

-

4.5

-

Internal Source Inductance

-

7.5

-

nH

Between lead,

6mm

(0.25in.)

from package and

center

of

die

contact

Ciss

Input Capacitance

-

1100

-

Coss

Output Capacitance

-

220

-

Crss

Reverse Transfer Capacitance

-

70

-

pF

f=1.0MHz, See Fig.5

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Conditions

Is

Continuous Source Current(Body Diode)

-

-

9.0

Pulsed Source Current (Body Diode) ①

-

-

36

A

MOSFET symbol

showing

the

integral

reverse

p-n junction diode

Diode Forward Voltage

-

-

2.0

V

trr

Reverse Recovery Time

-

230

350

ns

Qrr

Reverse Recovery Charge

-

1.7

2.6

µC

TJ=25℃, IF=9.0A

di/dt=100A/µs ④

ton

Forward Turn-On Time

Notes:

①

Repetitive rating; Pulse width Limited by max. junction temperature. (See fig. 11)

②

③

④

Pulse width ≤300µs; duty cycle ≤2%.