IRL640

HEXFET Power Mosfet

www.artschip.com

1

Dynamic dv/dt Rating

Repetitive Avalanche Rated

Logic-Level Gate Drive

Fast Switching

Ease of Paralleling

Simple Drive Requirements

Description

Third Generation HEXFETs from International Rectifier provide the designer with the best

combination of fast switching, ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at

power dissipation levels to approximately 50 watts. The low thermal resistance and low

package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter

Max.

Units

17

11

Pulsed Drain Current ①

68

A

Power Dissipation

125

W

Linear Derating Factor

1.0

W/℃

Gate-to-Source Voltage

±10

V

Single Pulse Avalanche Energy ②

580

mJ

Avalanche Current ①

10

A

Repetitive Avalanche Energy ①

13

mJ

dv/dt

Peak Diode Recovery dv/dt ③

5.0

V/ns

TJ

Operating Junction and

Storage Temperature Range

-55 to +150

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

℃

Mounting Torque, 6-32 or M3 screw

10 Ibf

•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

-

-

1.0

Case-to-Sink, Flat, Greased Surface

-

0.50

-

Junction-to-Ambient

-

-

62

℃

/W