IRLZ34

HEXFET® Power Mosfet

www.artschip.com

2

Electrical Characteristics @TJ=25℃ (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Drain-to-Source Breakdown Voltage

60

-

-

V

Breakdown Voltage Temp. Coefficient

-

0.070

-

V/℃

-

-

0.050

Static Drain-to-Source On-Resistance

-

-

0.070

Ω

Gate Threshold Voltage

1.0

-

2.0

V

gfs

Forward Transconductance

12

-

-

S

-

-

25

Drain-to-Source Leakage Current

-

-

250

µA

Gate-to-Source Forward Leakage

-

-

100

Gate-to-Source Reverse Leakage

-

-

-100

nA

Qg

Total Gate Charge

-

-

35

Qgs

Gate-to-Source Charge

-

-

7.1

Qgd

Gate-to-Drain (“Miller”) Charge

-

-

25

nC

td(on)

Turn-On Delay Time

-

14

-

tr

Rise Time

-

170

-

td(off)

Turn-Off Delay Time

-

30

-

tf

Fall Time

-

56

-

ns

Internal Drain Inductance

-

4.5

-

Ls

Internal Source Inductance

-

7.5

-

nH

Between lead,

6mm (0.25in.)

from package

and center of

die contact

Ciss

Input Capacitance

-

1600

-

Coss

Output Capacitance

-

660

-

Crss

Reverse Transfer Capacitance

-

170

-

pF

F=1.0MHz See Figure 5

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current

(Body Diode)

-

-

30

Pulsed Source Current

(Body Diode) ①

-

-

110

A

MOSFET symbol

Showing

the

integral

reverse

p-n

junction

diode.

Diode Forward Voltage

-

-

1.6

V

trr

Reverse Recovery Time

-

120

180

ns

Qrr

Reverse Recovery Charge

-

0.70

1.3

µC

TJ=25℃, IF=30A

Di/dt=100A/µs④

ton

Forward Turn-on Time

Notes:

①

Repetitive rating; pulse width limited by max. junction temperature (See Figure 11)

②

③

④

Pulse width≤300µs;duty cycle≤2%.