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4AM16 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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4AM16 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 11 page ![]() 4AM16 2 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol Nch Pch Unit Drain to source voltage V DSS 60 –60 V Gate to source voltage V GSS ±20 ±20 V Drain current I D 8 –8 A Drain peak current I D(pulse)* 1 32 –32 A Body to drain diode reverse drain current I DR 8 –8 A Channel dissipation Pch (Tc = 25°C)* 2 28 W Pch* 2 4.0 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Device Operation |
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