LITE-ON

TECHNOLOGY

CORPORATION

P r o p e r t y o f L i t e - O n O n l y

Electrical

Optical

Characteristics

At

Ta=25℃

℃

℃

℃

Parameter

Symbol

Part No.

LTST-

Min.

Typ.

Max.

Unit

Test Condition

Luminous Intensity

IV

S321KGKT

18.0

35.0

71.0

mcd

IF = 20mA

Note 1

Viewing Angle

2θ1/2

S321KGKT

130

deg

Note 2 (Fig.6)

Peak Emission Wavelength

λP

S321KGKT

574

nm

Measurement

@Peak (Fig.1)

Dominant Wavelength

λd

S321KGKT

567.5

571

576.5

nm

Note 3

Spectral Line Half-Width

Δλ

S321KGKT

15

nm

Forward Voltage

VF

S321KGKT

1.9

2.0

2.4

V

IF = 20mA

Reverse Current

IR

S321KGKT

10

μA

VR = 5V

Notes: 1. Luminous intensity is measured with a light sensor and filter combination that approximates the

CIE eye-response curve.

2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

3. The dominant wavelength, λd is derived from the CIE chromaticity diagram and represents the

single wavelength which defines the color of the device.

Part

No. : LTST-S321KGKT

Page :

4

of

12

BNS-OD-C131/A4